标题: 利用氮化钛底电极改善溶胶凝胶法制备之钛酸铋薄膜电阻转态特性之研究
Improvement of Resistive Switching Characteristics in Sol-Gel Derived Bi4Ti3O12 Thin Film Using TiN Bottom Electrode
作者: 李盈贤
Li, Ying-Xin
曾俊元
Tseng, Tseung-Yuen
电机学院微电子奈米科技产业专班
关键字: 氮化钛;TiN
公开日期: 2008
摘要: 近年来,对于新世代非挥发性记忆体的研究当中,如:相变化记忆体(PCM)、铁电记忆体(FeRAM)、磁阻式记忆体(MRAM)与电阻式记忆体(RRAM)…等已受到广泛的注意。其中,由于电阻式记忆体具有结构简单、操作速度快、低耗能、高密度及与半导体制程技术相容…等优点。因此,极有可能成为下一新世代非挥发性记忆体的主流之一。
本论文以溶胶凝胶法制备钛酸铋(Bi4Ti3O12)作为电阻式记忆体的转态层薄膜,并以氮化钛金属(TiN)作为底电极来改善其转态特性。结果发现氮化钛金属(TiN)可以降低元件操作的限流值、提升转态次数、提升良率、使转态区域固定在钛酸铋(Bi4Ti3O12)/氮化钛(TiN)的介面层…等优点。在记忆体可靠度的测试中,如:储存能力、非破坏性读取、高温量测…等,也有极佳的表现。此外,我们也将探讨元件的记忆体特性,并比较及讨论不同金属电极对记忆体特性的影响,更进一步由电性分析和材料分析的结果,去探讨并佐证可能的电阻式记忆体的电阻转换特性以及传导机制。
In recent years, the next-generation nonvolatile memory (NVM) research, such as: phase change memory (PCM), ferroelectric random access memory (FeRAM), magnetic random access memory (MRAM) and resistive random access memory (RRAM), have attracted great attention. Among them, as a result of RRAM has excellent characteristics of simple structure, high-speed operation, low-power consumption, high-density integration and compatibility to semiconductor process technology… and so on. Therefore, RRAM has been proposed to be one candidate of next-generation nonvolatile memory.
In this thesis, the RRAM devices manufactured based on Sol-Gel derived Bi4Ti3O12 thin films are studied and developed. The electrical properties are improved by using TiN as bottom electrode. The results show that TiN can reduce the operation compliance current, enhance the endurance, promote the device yield and clamp the resistive switching region at BTO/TiN interface. In memory reliability test, such as: retention, voltage stress and high temperature measurement, the device shows the best performance. Furthermore, we discuss and compare the effects of various metal electrodes in three different device structures. Finally, the possible resistive switching mechanism based on electrical and physical analyses results is also discussed in this thesis.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079694501
http://hdl.handle.net/11536/44161
显示于类别:Thesis