製程引起機械應力N型通道金氧半電晶體中之穿隧漏電流的特性量測與模型化

Abstract

在本文中，一個新的程序被應用來調查在機械應力下截止狀態的N型通道金氧半場效電晶體的穿隧漏電流。藉由一個建立在三角位能井的量子模擬器以及運用已知的製程參數和文獻發表變形位能常數為輸入，以此來擬合測量出來對應於閘極電壓的直接穿隧電流，並連至通道應力引起的數量經由一個閘極對淺溝槽絕緣側邊間隔技術。再者，漏電流被分成邊緣直接和表面能階對能階的穿隧電流。為了確認模型的可行性，達成了與量測資料相符的模擬數據，並且萃取出來的參數互相有一致性。

In this thesis, a new procedure is adopted to investigate the tunneling leakage currents in off-state n-channel MOSFET under mechanical stress. By means of a triangular potential based quantum simulator and with known process parameters and published deformation potential constants as input, fitting of the measured direct tunneling current versus gate voltage leads to the quantities of the channel stress via a gate-to-STI (shallow trench isolation) sidewall spacing technique. Then leakage currents are separated into the edge direct tunneling and surface band-to-band tunneling currents. Good agreements with the measurement data are achieved and the extracted parameters are consistent with each other, confirming the validity of the model.