利用堆疊式結構提升非均質矽鍺奈米線靈敏度之研究

Abstract

近幾年來，矽奈米線在生物感測上的應用都被廣泛的研究和探討，也被視為最具潛力的元件之一。本實驗室團隊也成功的製作出矽鍺奈米線，並證實矽鍺奈米線具有生物的感測特性。在本論文中，主要是在於P型矽鍺奈米線的探討以及堆疊式結構上的研究，藉由半導體製程的技術，將矽鍺奈米線製作於spacer的位置，接著藉由結構上的改變和矽鍺比例上的不同，製作出具有不同寬度和不同濃度的矽鍺奈米線，最後再藉由氧化上的處理，讓矽鍺奈米線中的鍺析出，使原本均質的矽鍺奈米線變成非均質的矽鍺奈米線，並證明寬度較小且濃度較高的非均質的矽鍺奈米線有較好的靈敏度。因此本論文所研究出的矽鍺奈米線，能在生物感測元件上的應用有更好的提升。

Recently, Si nanowire is generally investigated and discussed in bio-sensor applications. It is considered as one of the promising candidate for sensing devices. In our previous research, we successfully demonstrated the SiGe nanowire and we confirmed that it presented bio-sensor characteristic. In this thesis, it focused on the investigation of P-type SiGe nanowire and Si/SiGe stack structure process. First, SiGe nanowires were fabricated by sidewall spacer formation, which was compatible to VLSI technology. Second, we changed SiGe stack structure and Si/Ge ratio to fabricate SiGe nanowires, which were different widths and concentrations. Finally, we oxidized SiGe nanowires to precipitate Ge, and then we transformed homogenous structure into non-homogeneous structure. We confirm that non-homogeneous structure presented the better sensitivity. In our results, SiGe nanowires presented the better application in bio-sensor devices.