标题: | 矽光伏特材料于低温薄膜电晶体之应用 Application of photovoltaic silicon materials in low temperature |
作者: | 詹皇彦 Jhan, Huang-Yan 黄中垚 谢嘉民 Huang, Jung Y. Shieh, Jia-Min 显示科技研究所 |
关键字: | 薄膜电晶体;低温;Thin Film Transistor;low temperature |
公开日期: | 2009 |
摘要: | 大面积软性电路展现新型态的电子装置,快速的崛起在显示、感应装置、生医及其他領域。除此之外软性电子元件更具备许多优点,轻量化、可饶式、耐用、可以因应更多自由的设计。因为氢化非晶矽薄膜电晶体的成熟的低温制程,现阶段是最常被使用在液晶显示器以及软性电子,然而最大的缺点便是较低的电子迁移率、不稳定性以及较高的驱动电压。近來研究发展显示奈米或称微晶矽的材料是具有取代氢化非晶矽成为新一代软性电子及大面积电子元件潜力本篇論文中,利用高密度电浆化学气相沉积系统及热灯丝化学气相沉积系统在低温200oC 下沉积出高结晶性的氢化微晶矽薄膜以及低电阻率的n 型氢化微晶矽薄膜,并且藉由XRD 及SEM 确认氢化微晶矽薄膜,确认晶粒大小约100nm 等同于一般非晶矽藉由固相结晶法(Solid Phase Crystallization) 600℃退火24 小时的结晶性。使用简单的自我对准式薄膜电晶体,藉由场效传导法(Field Effect Conductance)取出缺陷密度(Density of states)从中了解不同结晶度对于缺陷密度分布之影响。最后将低缺陷密度之氢化微晶矽及n 型氢化微晶矽薄膜整合成功的制作出不需離子布植、低成本、低温、高结晶性的薄膜电晶体,开与关的电流差距超过105、开关速度达到S=100mV/decade,并且电子迁移率达到50 cm2/V-s 展现出极高的潜力应用于软性电子元件。 Flexible, large area circuits exhibit a new form of electronics which have led to rapidly rising and promising applications in displays, sensors, medical devices and other areas. Besides flexible electronics on plastic substrates possess advantageous characteristics, being lightweight, flexible, and have the capacity to be manufactured in a variety of shapes, which leads to freedom of design. Currently, a-Si:H TFTs are used in AMLCD and compatible with flexible substrate due to low temperature process. However, low device mobility, higher drive voltage and electrical instability are the main disadvantages of a-Si TFT. Recent developments reveal that micro- or nanocrystalline silicon is a promising alternative for flexible display and largearea electronic applications. The charge carrier mobility exceeds the mobility of amorphous silicon significantly and compatible with flexible substrate. In this thesis, a high quality and low resistivity of intrinsic and n-type microcrystalline silicon films were developed at low temperature 200oC by High Density Plasma chemical vapor deposition system and Hot-Wire chemical vapor deposition system. First μc-Si:H film was analyzed by XRD and SEM. And the μc-Si:H with a grain sizes of ~50-100 nm was recognized. The grain size is the same with conventional SPC(600℃annealing 24hours)method. A self-aligned TFTs was demonstrated. After that, the density of state distribution was extracted from TFTs by FEC method. With these results we can understand the different crystallinity on the effect of defect density distribution. Finally a top-gate microcrystalline TFTs without S/D implantation was demonstrated. A high electron mobility exceeding 50 cm2/V-s, low subthreshold swing 0.1-0.3 V/decade and high current ON/OFF ratios more than 105 was obtained. It shows highly potential in flexible electronics application. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT079715540 http://hdl.handle.net/11536/44821 |
显示于类别: | Thesis |
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