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dc.contributor.authorJWO, SCen_US
dc.contributor.authorWU, MTen_US
dc.contributor.authorFANG, YKen_US
dc.contributor.authorCHEN, YWen_US
dc.contributor.authorHONG, JWen_US
dc.contributor.authorCHANG, CYen_US
dc.date.accessioned2014-12-08T15:05:57Z-
dc.date.available2014-12-08T15:05:57Z-
dc.date.issued1988-08-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/16.2548en_US
dc.identifier.urihttp://hdl.handle.net/11536/4498-
dc.language.isoen_USen_US
dc.titleAMORPHOUS-SILICON SILICON-CARBIDE SUPERLATTICE AVALANCHE PHOTODIODESen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/16.2548en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume35en_US
dc.citation.issue8en_US
dc.citation.spage1279en_US
dc.citation.epage1288en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1988P433100011-
dc.citation.woscount37-
Appears in Collections:Articles


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