應變對砷化銦塊材能帶結構及傳輸性質的影響

Abstract

在本研究中，我們利用sp3d5s*緊束縛理論(Tight-Binding theory)計算InAs塊材受應變作用後的能帶結構。並進一步應用於評估高度摻雜的應變半導體之傳輸特性。透過能帶結構計算，可以得到受應變作用後的半導體中載子傳輸時的有效質量及態密度的分佈。根據能帶的計算結果所求得的等效質量，同時假設載子-聲子散射時間為定値，可估算半導體中溫度及應變對載子遷移率的影響。

In this work, we shall perform numerical simulations of the electronic structures in transport properties of strained InAs Bulk under applied stresses. The numerical tool is developed within the framework of the atomistic sp3d5s* tight–binding theory. From the calculated band structures, the transport effective masses and the density of states of carriers in the strained semiconductors can be extracted. With the calculated effective masses of electrons, the mobility of carriers in the InAs semiconductors under biaxial and uniaxial stresses can be evaluated under the assumption of constant e-phonon scattering time as a function of temperature and strain. The simulation results provide useful information for seeking for the new materials suitable for the next generation high speed transistor.