TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHIEN, HC	en_US
dc.contributor.author	ASHOK, S	en_US
dc.contributor.author	CHEN, MC	en_US
dc.date.accessioned	2014-12-08T15:05:57Z	-
dc.date.available	2014-12-08T15:05:57Z	-
dc.date.issued	1988-07-01	en_US
dc.identifier.issn		en_US
dc.identifier.uri	http://hdl.handle.net/11536/4506	-
dc.language.iso	en_US	en_US
dc.title	TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	7	en_US
dc.citation.spage	L1317	en_US
dc.citation.epage	L1319	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1988P978500051	-
dc.citation.woscount	4	-
顯示於類別：	期刊論文