| 標題: | STUDIES ON ARGON ION IMPLANT DAMAGED SILICON SURFACE BARRIERS |
| 作者: | CHIEN, HC ASHOK, S 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| 公開日期: | 1-Sep-1986 |
| URI: | http://hdl.handle.net/11536/4725 |
| ISSN: | 0361-5235 |
| 期刊: | JOURNAL OF ELECTRONIC MATERIALS |
| Volume: | 15 |
| Issue: | 5 |
| 起始頁: | 296 |
| 結束頁: | 296 |
| Appears in Collections: | Articles |
- Argon ion-implantation on polysilicon or amorphous-silicon for boron penetration suppression in p(+) pMOSFET / Lee, LS;Lee, CL
- Dielectric properties of nitric oxide-annealed gate oxides grown on nitrogen-implanted silicon substrates / Chen, Y. Y.;Chien, C. H.;Lou, J. C.
- Enhanced performance and reliability for solid-phase crystallized poly-Si TFTs with argon ion implantation / Chang, Chia-Wen
- TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON / CHIEN, HC;ASHOK, S;CHEN, MC
- 氬離子植入及百萬電子伏特之質子照射在超大型積體電路上的應用 / 李隆盛;Lurng Shehng Lee;李崇仁;Chung Len Lee
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