TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON

標題:	TEMPERATURE-DEPENDENCE OF HYDROGEN IMPLANT ON PASSIVATION OF ARGON IMPLANT DAMAGE IN SILICON
作者:	CHIEN, HC ASHOK, S CHEN, MC 電控工程研究所 Institute of Electrical and Control Engineering
公開日期:	1-七月-1988
URI:	http://hdl.handle.net/11536/4506
ISSN:
期刊:	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume:	27
Issue:	7
起始頁:	L1317
結束頁:	L1319
顯示於類別：	期刊論文