Full metadata record
DC FieldValueLanguage
dc.contributor.authorYen, Hsi-Hsuanen_US
dc.contributor.authorYeh, Wen-Yungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2014-12-08T15:06:01Z-
dc.date.available2014-12-08T15:06:01Z-
dc.date.issued2007-06-01en_US
dc.identifier.issn0031-8965en_US
dc.identifier.urihttp://dx.doi.org/10.1002/pssa.200674766en_US
dc.identifier.urihttp://hdl.handle.net/11536/4563-
dc.description.abstractWe report a new design of the light-emitting device which can be operated under alternating current source directly. The new type alternating current driven light-emitting device (AC LED) can increase the radition area in each bias direction to improve the device efficiency by the Wheatstone Bridge (WB) circuit design. WB-AC LEDs with different designs were fabricated and the electrical and optical characteristics were measured. It is found that the efficiency of the WB-AC LED is influenced by the varied area ratio of the rectified microchip to the central one because of the different current density and forward bias of each microchip. Additionally, the relationship between the area ratio of microchips and the wall plug efficiency of the WB-AC LED has also been discussed. (C) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.language.isoen_USen_US
dc.titleGaN alternating current light-emitting deviceen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1002/pssa.200674766en_US
dc.identifier.journalPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCEen_US
dc.citation.volume204en_US
dc.citation.issue6en_US
dc.citation.spage2077en_US
dc.citation.epage2081en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000247542500079-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000247542500079.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.