標題: | Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode |
作者: | Yen, Hsi-Hsuan Kuo, Hao-Chung Yeh, Wen-Yung 光電工程學系 Department of Photonics |
關鍵字: | GaN;light-emitting diode;alternating current;Wheatstone Bridge |
公開日期: | 1-十二月-2008 |
摘要: | In this study, a GaN-based alternating current light-emitting diode (AC-LED) with 34 numbers of microchips illuminated in each bias direction was fabricated. After calibrating the integration duration, the light output powers of the AC-LED driven by AC and DC were 388.1 and 312.8 mW when the input power was about I W, respectively. The flickering illumination mode of the AC-LED driven by AC decreased the heat accumulation and revealed a higher energy utilization efficiency than that of the AC-LED driven by DC. The larger blue shift and smaller full width at half maximum of the AC-LED driven by AC than those of the AC-LED driven by DC were also observed. [DOI: 10.1143/JJAP.47.8808] |
URI: | http://dx.doi.org/10.1143/JJAP.47.8808 http://hdl.handle.net/11536/8076 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.47.8808 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 47 |
Issue: | 12 |
起始頁: | 8808 |
結束頁: | 8810 |
顯示於類別: | 期刊論文 |