完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | TSENG, HH | en_US |
dc.contributor.author | WU, CY | en_US |
dc.date.accessioned | 2014-12-08T15:06:01Z | - |
dc.date.available | 2014-12-08T15:06:01Z | - |
dc.date.issued | 1988-01-01 | en_US |
dc.identifier.issn | 0038-1101 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/4578 | - |
dc.language.iso | en_US | en_US |
dc.title | THE EFFECTS OF THERMAL SILICIDATION ON THE CURRENT TRANSPORT CHARACTERISTICS OF TI/(111)SI SCHOTTKY-BARRIER CONTACTS | en_US |
dc.type | Article | en_US |
dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
dc.citation.volume | 31 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 35 | en_US |
dc.citation.epage | 44 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 工學院 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | College of Engineering | en_US |
dc.identifier.wosnumber | WOS:A1988L593300006 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |