| 標題: | ELLIPSOMETRY MEASUREMENTS ON SIO2-FILMS FOR THICKNESSES UNDER 200-A |
| 作者: | HO, JH LEE, CL JEN, CW LEI, TF 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| 公開日期: | 1-Sep-1987 |
| URI: | http://hdl.handle.net/11536/4621 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 30 |
| Issue: | 9 |
| 起始頁: | 973 |
| 結束頁: | 981 |
| Appears in Collections: | Articles |
- Photoelastic modulated imaging ellipsometry by stroboscopic illumination technique / Han, CY;Chao, YF
- MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICON / CHAO, TS;LEE, CL;LEI, TF
- ELLIPSOMETRY STUDY ON REFRACTIVE-INDEX PROFILES OF THE SIO2/SI3N4/SIO2/SI STRUCTURE / TIEN, SC;CHUNG, LL;TAN, FL
- MEASUREMENT OF ULTRATHIN (LESS-THAN-100-A) OXIDE-FILMS BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY / CHAO, TS;LEE, CL;LEI, TF
- THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER / CHAO, TS;LEE, CL;LEI, TF
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