MICROSTRUCTURE AND PROPERTIES OF MULTILAYER-DERIVED TUNGSTEN SILICIDE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHIOU, BS	en_US
dc.contributor.author	RAU, HL	en_US
dc.contributor.author	CHANG, PH	en_US
dc.contributor.author	DUH, JG	en_US
dc.date.accessioned	2014-12-08T15:06:04Z	-
dc.date.available	2014-12-08T15:06:04Z	-
dc.date.issued	1987-07-01	en_US
dc.identifier.issn	0361-5235	en_US
dc.identifier.uri	http://dx.doi.org/10.1007/BF02653362	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4634	-
dc.language.iso	en_US	en_US
dc.title	MICROSTRUCTURE AND PROPERTIES OF MULTILAYER-DERIVED TUNGSTEN SILICIDE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1007/BF02653362	en_US
dc.identifier.journal	JOURNAL OF ELECTRONIC MATERIALS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	4	en_US
dc.citation.spage	251	en_US
dc.citation.epage	255	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1987J352900005	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文