鎳誘發側向結晶複晶矽薄膜電晶體－垂直通道結構應用於低溫複晶矽薄膜電晶體

Abstract

本實驗成功的利用鎳誘發側向結晶(MILC)，製造出垂直通道複晶矽薄膜電晶體。垂直通道結構的製造，主要是利用 (1)SF6 和HBr氣體來調整蝕刻程式與(2)藉由添加硬遮蔽物來改善深寬比。使用F離子將鎳金屬植入到非結晶矽晶層;再利用加熱方式來誘發側向結晶複晶矽且可以減少鎳金屬濃度和陷阱位置密度，發現鎳誘發側向結晶(MILC)薄膜電晶體(TFTs)的電特性比固相結晶(SPC)薄膜電晶體(TFTs)表現佳。

This study has successfully fabricated the vertical channel polysilicon thin film transistor by Ni induced lateral crystallization (MILC). Vertical Channel Polysilicon were mainly fabricated by using (1) Sulphur hexafluoride (SF6) and Hydrogen bromide (HBr) gases to fine tune etching recipes, and (2) by adding a hard mask to improve the aspect ratio. F+ ion was used to drive Ni into the amorphous silicon layer. Annealing treatment can induce lateral crystallization polysilicon and reduce the Ni concentration and the trap state density. It was found that the Ni induced lateral crystallization (MILC) thin film transistors (TFTs) exhibit better electrical characterization than the solid phase crystallization (SPC) thin film transistors (TFTs).