電荷阻擋層對光增益有機光偵測器之偵測度影響

Abstract

本研究中我們利用三種不同的電洞阻擋層，BCP、Bebq2與TPD提升光增益有機光偵測器之效能，其目的在於抑制在逆向偏壓下電洞的注入和降低暗電流，再加上載子的再結合減少而提升了外部量子效率，因此最終能提升有機光增益光偵測器之偵測度。從實驗結果可發現，BCP與Bebq2在某些厚度之下對元件之偵測度會提升，因而我們了解到使用正確且適當厚度的阻擋層，對元件的表現有很大的幫助。

In this study, we demonstrated organic photomultiple photodetectors containing 2,9-Dimethyl-4,7-dipheny-1,10-phenantholine (BCP), Bis(10-hydroxybenzo[h]q uinolinato) beryllium (Bebq2) and N,N’-Bis(3-methylphenyl) N,N’-bis(phen yl) (TPD) as charge blocking materials for suppressing the hole injection and dark current under reverse bias conditions. In addition, we suspect that the increase of external quantum efficiency was due to the decrease of recombination. These changes led to an increase in detectivities. We also found that only in the specific thickness of BCP and Bebq2 can achieve high performance. Thus, proper choice of hole blocking layer materials led to high detectivities in the devices.