標題: 銻化物高電子遷移率電晶體研究
Studies of Sb-based High Electron Mobility Transistors
作者: 李孟穎
Li, Meng-Ying
李建平
Lee, Chien-Ping
電子研究所
關鍵字: 銻化物;三五族;高電子遷移率電晶體;砷化鎵;糾結效應;軟性崩潰電壓;Sb;III-V;HEMT;GaAs;Kink effect;soft-breakdown
公開日期: 2010
摘要: 這篇論文主要是研究銻(Sb)化物材料的高電子遷移率電晶體元件(HEMT)的
開發。由於銻化物材料和砷化鎵(GaAs)基板之間的晶格差異很大,所以在使用分
子束磊晶系統(MBE)的過程需要透過變晶成長的方式進行磊晶。藉由實驗我們成
功成長出高電子遷移率的試片(22700cm2V-1s-1)。此外,對於閘極長度為2um 的
電晶體,傳導率(transconductance)為730mS/mm。對於閘極長度為50nm 的電晶
體,其截止頻率(ft)和最大震盪頻率(fmax)分別為50GHz 和5GHz。
除此之外,由於銻化物材料本身的能帶間隙非常的小,因此元件在操作的過
程很容易就產生碰撞游離,造成糾結效應(Kink effect)。本研究也展示了透過主動區的結構調整,可以加大能帶間隙,進而提高糾結效應所造成的軟性崩潰電壓(soft-breakdown voltage)。
This thesis focuses on the development of Sb-based High Electron Mobility Transistor (HEMT). In this work, because of the large lattice mismatch, the Sb-based HEMT is grown on semi-insulating GaAs substrate by using metamorphic MBE growth. The best electron mobility we obtained is 22700cm2V-1s-1 by experiments. In addition, the fabricated device showed the maximum transconductance is 730mS/mm
at a high drain bias Vd=1.6V for a 2um gate length device. The cut-off frequency (ft) is 50GHz and the maximum oscillation frequency (fmax) is 5GHz for a 50nm gate length device.
Furthermore, due to the narrow band gap of Sb-based material, the device would generate impact ionization easily and cause the kink effect. This work also demonstrates the adjustment of the channel structure to enlarge the soft-breakdown voltage resulting from kink effect.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079811504
http://hdl.handle.net/11536/46687
顯示於類別:畢業論文


文件中的檔案:

  1. 150401.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。