Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 許伯驊 | en_US |
dc.contributor.author | 林育德 | en_US |
dc.date.accessioned | 2014-12-12T01:47:03Z | - |
dc.date.available | 2014-12-12T01:47:03Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT009113607 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/46957 | - |
dc.description.abstract | 本論文因應無線通訊射頻電路對高品質電感的需求,提出有別於傳統 架構,極具創意之高Q值,小面積電感。當今CMOS VLSI 0.18um technology 提供6 層金屬和一層多晶矽,使得電感設計有更多發揮的空間,想要設計出Q 值高,面積小之電感不再是夢想。Q 值、L 值及面積是電感之重要參數,一般由晶圓廠提供之電感Q 值不高又佔面積,以TSMC 0.18um 1P6M technology 為例提供的是方形電感,Q < 8,Area > 0.0467mm2,UMC 0.18um 1P6M 提供的是圓形電感,Q < 19.41,Area > 0.06 mm2。下線實作部分(tapeout),TSMC 及UMC 都有實作經驗,但以UMC 為主,最後有做本案設計之電感與UMC 電感之比較。另外,本文亦提供相當準確之電感模型,並與量測結果做比較,以利電路設計者參考使用。 | zh_TW |
dc.language.iso | en_US | en_US |
dc.subject | 電感 | zh_TW |
dc.subject | 小面積 | zh_TW |
dc.subject | 3D | zh_TW |
dc.subject | 對稱型 | zh_TW |
dc.subject | RF | en_US |
dc.subject | CMOS | en_US |
dc.subject | Inductors | en_US |
dc.subject | 3D | en_US |
dc.subject | symmetry | en_US |
dc.title | 新型微小高Q 值電感之分析、設計及模型建立 | zh_TW |
dc.title | Analysis, Design and Modeling of Novel Miniature High | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
Appears in Collections: | Thesis |
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