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dc.contributor.authorLin, YMen_US
dc.contributor.authorJang, SMen_US
dc.contributor.authorYu, CHen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorChen, JYen_US
dc.date.accessioned2014-12-08T15:01:39Z-
dc.date.available2014-12-08T15:01:39Z-
dc.date.issued1997-07-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://hdl.handle.net/11536/469-
dc.description.abstractThis paper presents plasma-enhanced tetraethylorthosilicate oxide process (PETEOS) induced hot-carrier reliability associated with an intermetallic dielectric formed by depositing oxide films from PETEOS, ozone-TEOS, and spin-on glass (SOG), where a single or dual-frequency PETEOS film is deposited as an underlayer followed by an ozone-TEOS deposition for gap filling and a SOG coating for planarization. The impact of PETEOS process conditions such as low-and high-frequency plasma power and PETEOS film thickness on hot-carrier reliability are studied. It is observed that increasing the low- and/or high-frequency plasma power can improve the film quality and moisture-related hot carrier immunity, but at the expense of plasma charging damage. This plasma charging damage accumulates gradually and finally saturates as the deposition of oxide from PETEOS proceeds. In general, a thick PETEOS layer is desired for improving the moisture-related hot carrier immunity. As a result, there is a trade-off between the plasma charging damage and the moisture-related hot carrier immunity. The plasma charging damage is dominant in large devices and the moisture-related hot-carrier immunity is dominant in small devices.en_US
dc.language.isoen_USen_US
dc.titlePlasma charging damage and water-related hot-carrier reliability in the deposition of plasma-enhanced tetraethylorthosilicate oxideen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume144en_US
dc.citation.issue7en_US
dc.citation.spage2525en_US
dc.citation.epage2530en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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