標題: | The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n(+) type doped GaAs |
作者: | Wang, DP Huang, KM Shen, TL Huang, KF Huang, TC 電子物理學系 Department of Electrophysics |
公開日期: | 1-一月-1998 |
摘要: | The electroreflectance (ER) spectra of an undoped-n(+) type doped GaAs has been measured at various amplitudes of modulating fields (delta F). Many Franz-Keldysh oscillations were observed above the band gap energy, thus enabling the electric field (F) in the undoped layer to be determined. The F is obtained by applying fast Fourier transformation to the ER spectra. When delta F is small, the power spectrum can be clearly resolved into two peaks, which corresponds to heavy- and light-hole transitions. When delta F is less than similar to 1/8 of the built-in field (F(bi)similar to 77 420 V/cm), the F deduced from the ER is almost independent of delta F. However, when larger than this, F is increased with delta F. Also, when delta F is increased to larger than similar to 1/8 of F-bi, a shoulder appears on the right side of the heavy-hole peak of the power spectrum. The separation between the main peak and the shoulder of the heavy-hole peak becomes wider as delta F becomes larger. (C) 1998 American Institute of Physics. |
URI: | http://hdl.handle.net/11536/46 |
ISSN: | 0021-8979 |
期刊: | JOURNAL OF APPLIED PHYSICS |
Volume: | 83 |
Issue: | 1 |
起始頁: | 476 |
結束頁: | 479 |
顯示於類別: | 期刊論文 |