射頻低雜訊放大器與被動元件之實作與設計

Abstract

本論文主要研究射頻積體電路中的低雜訊放大器以及異質接面雙載子電晶體雜訊分析與被動元件，包括了電感與變壓器。

由於電感與變壓器在射頻積體電路日趨重要，獲得元件的模型將有幫助日後的電路設計。因為GCT 2μm InGaP/GaAs HBT擁有較好的最低雜訊指數和較高的增益，所以利用HBT製程，來研製應用於802.11a WLAN 之 5GHz 頻帶低雜訊放大器。但是晶片製造廠提供的模型不可盡信，因此我們利用各種不同大小的主動元件去量測其高頻參數（S參數和雜訊參數）與整理分析之，進而從中設計低雜訊放大器。最後在透過實作去探討內部匹配對低雜訊放大器的影響。確定內部匹配大大增加了低雜訊放大器的增益，也提升的低雜訊放大器特性

This thesis describes Low Noise Amplifier, Analysis of HBT noise, and passive element including inductor and transformer.

Nowadays, an accurate inductor or transformer device model can really help for circuit designer due to its importance in RF circuit.

Because high gain and low noise characteristic of InGaP/GaAs HBT, it is better choice for Radio Frequency Low Noise Amplifier design , such as 802.11a WLAN application. The model provided by the foundry may not be totally accurate, so we measure and analyze active devices to get high frequency S and noise parameters. Then a 5.2GHz low noise amplifier is implemented with measurement-based design data. Finally, Inter-Stage Matching technique provides higher gain and high performance by implemented a low noise amplifier with Inter-Stage Matching.