釕與二氧化釕複合薄膜於導體、半導體與絕緣體基材上之無電鍍沉積

Abstract

在本研究中，我們利用本實驗室開發的無電鍍液配方，製備釕與二氧化釕複合薄膜於三種不同類型的基材上，依導電度分別為導體(銅)、半導體(矽)、和非導體(丙烯腈－丁二烯－苯乙烯共聚物和二氧化矽)。由於基材表面的性質不同，因此基材需要不同的前處理，然後再進行無電鍍。發現除了二氧化矽，每種經過不同前處理的基材上都可以成功地無電鍍沉積釕或二氧化釕複合薄膜，不過膜的形貌、成長速率等卻不大相同，分別討論其因素。 在銅基材的研究上，我們成功地無電鍍沉積釕和二氧化釕複合薄40-450 nm於無活化和有活化的銅基材上。在矽基材的研究上，我們無電鍍沉積釕和二氧化釕複合薄膜35-105 nm於無活化、有活化、有敏化活化的矽基材上。在丙烯腈－丁二烯－苯乙烯共聚物基材的研究上，釕和二氧化釕複合薄膜可被無電鍍沉積於有敏化活化的丙烯腈－丁二烯－苯乙烯共聚物基材上。以XPS分析薄膜組成，為72-99.4 % 的釕和0.6-28 %的二氧化釕。而二氧化矽基材無法無電鍍沉積，是因為二氧化矽在鹼性鍍液中被腐蝕的速率大於複合膜沉積的速率。

In this study, we explore the electroless deposition of composite Ru/RuO2 film on a variety of substrates including conductor (copper), semiconductor (silicon), as well as insulator (acrylonitril butadiene styrene and silicon dioxide). Due to their distinct surface natures, these substrates undergo different pretreatments to facilitate nucleation and growth of Ru from the plating bath. Except for silicon dioxide, we are able to form composite Ru/RuO2 films with various surface morphologies, deposition rates, and atomic ratio of Ru/RuO2. For the Cu substrate, we successfully deposit 40-450 nm composite Ru/RuO2 films without and with surface activation treatments. For the Si substrate, we demonstrate the formation of 35-105 nm films without and with surface activation treatment, as well as sensitization and activation treatment. For the substrate of acrylonitril butadiene styrene, the composite can be prepared only after sensitization and activation treatment. XPS analysis on the composite films indicates a composition in the range of 72-99.4 % Ru and 0.6-28 % RuO2. Failure to produce a deposit on the silicon dioxide substrate is caused by the excess alkalinity of the plating bath that renders a faster corrosion rate of silicon dioxide as compared to the formation rate of Ru composite films.