AN ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SHORT-CHANNEL ENHANCEMENT MODE N-CHANNEL MOSFETS WITH DOUBLE BORON CHANNEL IMPLANTATION

Full metadata record

DC Field	Value	Language
dc.contributor.author	WU, CY	en_US
dc.contributor.author	HUANG, GS	en_US
dc.contributor.author	CHEN, HH	en_US
dc.date.accessioned	2014-12-08T15:06:11Z	-
dc.date.available	2014-12-08T15:06:11Z	-
dc.date.issued	1986-04-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4759	-
dc.language.iso	en_US	en_US
dc.title	AN ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SHORT-CHANNEL ENHANCEMENT MODE N-CHANNEL MOSFETS WITH DOUBLE BORON CHANNEL IMPLANTATION	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	29	en_US
dc.citation.issue	4	en_US
dc.citation.spage	387	en_US
dc.citation.epage	394	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1986A899500002	-
dc.citation.woscount	9	-
Appears in Collections:	Articles