Title: | AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION |
Authors: | WU, CY DAIH, YW 交大名義發表 工學院 National Chiao Tung University College of Engineering |
Issue Date: | 1-Dec-1985 |
URI: | http://hdl.handle.net/11536/4789 |
ISSN: | 0038-1101 |
Journal: | SOLID-STATE ELECTRONICS |
Volume: | 28 |
Issue: | 12 |
Begin Page: | 1271 |
End Page: | 1278 |
Appears in Collections: | Articles |