AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION

標題:	AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION
作者:	WU, CY DAIH, YW 交大名義發表工學院 National Chiao Tung University College of Engineering
公開日期:	1-Dec-1985
URI:	http://hdl.handle.net/11536/4789
ISSN:	0038-1101
期刊:	SOLID-STATE ELECTRONICS
Volume:	28
Issue:	12
起始頁:	1271
結束頁:	1278
Appears in Collections:	Articles