AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES

Title:	AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES
Authors:	HUANG, GS WU, CY 交大名義發表工學院 National Chiao Tung University College of Engineering
Issue Date:	1-Jun-1987
URI:	http://hdl.handle.net/11536/4639
ISSN:	0018-9383
Journal:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	34
Issue:	6
Begin Page:	1311
End Page:	1322
Appears in Collections:	Articles

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APA	HUANG, G., & WU, C. (1987). AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES. WOS:A1987H779400012.
Bibtex	@article{HUANG1987AN, title={AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES}, author={HUANG, GS and WU, CY}, journal={WOS:A1987H779400012}, year={1987}, url={https://ir.lib.nycu.edu.tw/handle/11536/4639}, }