AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES

標題:	AN ANALYTIC IV MODEL FOR LIGHTLY DOPED DRAIN (LDD) MOSFET DEVICES
作者:	HUANG, GS WU, CY 交大名義發表工學院 National Chiao Tung University College of Engineering
公開日期:	1-Jun-1987
URI:	http://hdl.handle.net/11536/4639
ISSN:	0018-9383
期刊:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	34
Issue:	6
起始頁:	1311
結束頁:	1322
Appears in Collections:	Articles

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