矽化鈦奈米線之電性研究

Abstract

奈米科技近年來蓬勃發展製程已邁向22奈米，有些材料其塊材性質和奈米線性質有些差異，因此研究這些材料的奈米結構性質是個重要的課題。 本篇論文是研究TiSi奈米線的基本性質以及電性傳輸，Ti和Si的各種化合物大多具有低電阻率、高熔點、高抗氧化力的特色。而TiSi奈米線是由交大應化裘性天實驗室首先成長成功，研究後也符合上述特性。 我們使用聚焦離子束技術(Focus Ion Beam(FIB)) 製作奈米線的連接電極，在二種不同的沉積條件下，量測到截然不同的二種電性傳輸性質。證明了FIB會完全破壞奈米線，而量測到非奈米線本身性質。我們也使用電子束微影技術製作電極來印證我們的推論。

Applications of nanostructures in semiconductor industry in recent years has been towards the 22 nm manufacturing process, some materials properties of bulk and properties of nanowire are some differences, the study of nano-structural properties of these materials is an important issue. We study the basic properties and electrical transmission of TiSi nanowires, the most compounds of Ti and Si are low resistivity, high melting point and high antioxidant characteristics. The TiSi nanowires manufactured by Chiulab, Department of Applied Chemistry, National Chiao Tung University. It is the first successful production of TiSi. We used focused ion beam technology to produce nano-wire connection electrodes in two different deposition conditions, the measured two kinds of different electrical transport properties. I proved that FIB completely destroyed nanowires, and measured non-nanowire itself. We also use electron beam lithography to create electrodes confirms our inference.