標題: AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI
作者: WU, CY
HUANG, GS
CHEN, HH
TSENG, FC
SHIH, CT
工學院
College of Engineering
公開日期: 1-十二月-1985
URI: http://hdl.handle.net/11536/4788
ISSN: 0038-1101
期刊: SOLID-STATE ELECTRONICS
Volume: 28
Issue: 12
起始頁: 1263
結束頁: 1269
顯示於類別:期刊論文