| Title: | AN ACCURATE AND ANALYTIC THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY MOSFETS WITH SINGLE-CHANNEL ION-IMPLANTATION IN VLSI |
| Authors: | WU, CY HUANG, GS CHEN, HH TSENG, FC SHIH, CT 工學院 College of Engineering |
| Issue Date: | 1-Dec-1985 |
| URI: | http://hdl.handle.net/11536/4788 |
| ISSN: | 0038-1101 |
| Journal: | SOLID-STATE ELECTRONICS |
| Volume: | 28 |
| Issue: | 12 |
| Begin Page: | 1263 |
| End Page: | 1269 |
| Appears in Collections: | Articles |
- A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's / Wu, CM;Wu, CY
- AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS / CHUNG, SSS;LIN, TS;CHEN, YG
- A NEW SIMPLIFIED THRESHOLD-VOLTAGE MODEL FOR N-MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE AND ITS APPLICATION TO MOSFETS MINIATURIZATION / MAA, JJ;WU, CY
- AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI / WU, CY;YANG, SY;CHEN, HH;TSENG, FC;SHIH, CT
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