AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION

Full metadata record

DC Field	Value	Language
dc.contributor.author	WU, CY	en_US
dc.contributor.author	DAIH, YW	en_US
dc.date.accessioned	2014-12-08T15:06:13Z	-
dc.date.available	2014-12-08T15:06:13Z	-
dc.date.issued	1985-12-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4789	-
dc.language.iso	en_US	en_US
dc.title	AN ACCURATE MOBILITY MODEL FOR THE I-V-CHARACTERISTICS OF N-CHANNEL ENHANCEMENT-MODE MOSFETS WITH SINGLE-CHANNEL BORON IMPLANTATION	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	28	en_US
dc.citation.issue	12	en_US
dc.citation.spage	1271	en_US
dc.citation.epage	1278	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	工學院	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	College of Engineering	en_US
dc.identifier.wosnumber	WOS:A1985AXH4700014	-
dc.citation.woscount	18	-
Appears in Collections:	Articles