| 標題: | A NEW THRESHOLD-VOLTAGE MODEL FOR SMALL-GEOMETRY BURIED-CHANNEL MOSFETS |
| 作者: | WU, CY HSU, KC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| 公開日期: | 1-Dec-1985 |
| URI: | http://hdl.handle.net/11536/4790 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 28 |
| Issue: | 12 |
| 起始頁: | 1283 |
| 結束頁: | 1289 |
| Appears in Collections: | Articles |
- A NEW SIMPLIFIED 2-DIMENSIONAL MODEL FOR THE THRESHOLD VOLTAGE OF MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE / LIN, PS;WU, CY
- A study of threshold voltage fluctuations of nanoscale double gate metal-oxide-semiconductor field effect transistors using quantum correction simulation / Li, Yiming;Yu, Shao-Ming
- A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's / Wu, CM;Wu, CY
- AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS / CHUNG, SSS;LIN, TS;CHEN, YG
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