變壓耦合式電漿二維流體模型與批次電漿蝕刻設備控制

Abstract

變壓耦合式電漿為目前半導體廠中最常使用的蝕刻設備，在本研究中，利用電腦中Microsoft Visual Basic軟體，建構出一個人機介面的模擬平台，模擬架構出二維TCP(Transformer-Coupled-Plasma)電漿蝕刻設備之基礎模型，並在模型的支援之下，改變幾個主要的參數來觀察電漿內部的變化情形，再將所建立出的電漿設備理論模型中加入批次製程設備控制的概念，使電漿蝕刻設備能達到最好的電漿密度分佈，從而改善電漿蝕刻設備的蝕刻率(etching rate)。在研究中，亦發展出改善均勻度(uniformity)的構想，藉以增進電漿蝕刻設備於前段製程上的應用與發展。

The Transformer-Coupled-Plasma is one of the most important and commonly used etching equipment in chip foundry today. In this research, we employ the software “Microsoft Visual Basic” in the computer to construct a basic two dimensional fluid model of TCP (Transformer-Coupled-Plasma) etching equipment, which is made in a User-Interface mode .By the support of this basic TCP model, we can change several major input parameters to observe the variation in the plasma chamber, and go on to add the concept of Run-to Run plasma etching equipment control using this model. After that, we can reduce the source power to get better plasma density distribution in the chamber, even more to improve the wafer etching rate .Form this research, we also recommend a new idea to improve the wafer etching uniformity, for the purpose of enhancing application and development of plasma etching equipment in the front end of wafer processing line.