| 標題: | CURRENT MULTIPLICATION IN MIS STRUCTURES |
| 作者: | CHEIN, WJ CHUNG, LL TAN, FL 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
| 公開日期: | 1984 |
| URI: | http://hdl.handle.net/11536/4854 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 27 |
| Issue: | 1 |
| 起始頁: | 1 |
| 結束頁: | 11 |
| Appears in Collections: | Articles |
- A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure / Chang, Tzu-Yueh;Chang, Chun-Lung;Lee, Hsin-Yu;Lee, Po-Tsung
- A Comparison Study on the Al-based Interfacial Layers for Ge MIS Devices / Yang, Yi-Gin;Tsui, Bing-Yue
- Optimization of gate insulator material for GaN MIS-HEMT / Lin, Y. C.;Lin, T. W.;Wu, C. H.;Yao, J. N.;Hsu, H. T.
- 藉由高介電質材料做表面鈍化及閘極絕緣層改善氮化鋁鎵/氮化鎵之高電子遷移率電晶體元件特性 / 廖仁廷;Liao, Jen-Ting;張翼;林萬里
- 以氧化鑭/二氧化矽堆疊式氧化層作為高功率氮化鎵高電子遷移率電晶體之閘極氧化層之研究 / 林岱葦;Lin, Tai-Wei;張翼;馬哲申;Chang, Edward-Yi
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