AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, CY	en_US
dc.contributor.author	YANG, SY	en_US
dc.contributor.author	CHEN, HH	en_US
dc.contributor.author	TSENG, FC	en_US
dc.contributor.author	SHIH, CT	en_US
dc.date.accessioned	2014-12-08T15:06:17Z	-
dc.date.available	2014-12-08T15:06:17Z	-
dc.date.issued	1984	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4858	-
dc.language.iso	en_US	en_US
dc.title	AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI	en_US
dc.type	Article	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	27	en_US
dc.citation.issue	7	en_US
dc.citation.spage	651	en_US
dc.citation.epage	658	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1984TQ36100007	-
dc.citation.woscount	17	-
顯示於類別：	期刊論文