标题: 以限制理论需求拉动补货策略改善挡控片库存管理-以M半导体工厂为例
Using TOC Demand Pull to Improve the Inventory Management of Dummy & Control Wafers - A Case Study on Foundry M
作者: 高一正
张永佳
管理学院工业工程与管理学程
关键字: 限制理论;库存水准;缓冲管理;需求拉动补货;Theory of Constraint;Inventory Level;Buffer Management;Demand-Pull Replenishment
公开日期: 2011
摘要: 半导体业发展已经超过40年,其特性为兼具技术与资本的产业。晶圆制造的良率是决定制造成本高低的一项关键,而稳定的机台生产条件是维持晶圆制造的良率必备条件。为维持好的机台生产条件,晶圆制造厂便需要挡控片来稳定及监控机台生产状况。一旦发生缺货,将会造成生产线机台停摆。所以,为避免产能损失,生产线都会备大量的挡控片库存因应,但同时大量的挡控片库存也会造成成本浪费及资金积压。

本研究以M半导体工厂库存水准为例,依据限制理论(Theory of Constraints, TOC)以需求拉动补货与动态缓冲管理方式,透过实际数据的模拟与验证,来证明比现行使用预测需求补货的方式,更能够在避免缺货的状况下,提供管理者能用”较低 ”的库存水准来备库存,进而提升工厂竞争能力。
Semiconductor industry has been developed over 40 years. It has been known as a capital and technical intensive industry. The yield of wafer manufacturing process is a key factor to decide the manufacturing cost and a stable equipment condition is a must to sustain the wafer manufacturing yield. Wafer foundry has been using dummy & control wafers to stabilize and monitor its manufacturing condition of the semiconductor equipment for a long time, once there is a shortage of the dummy & control wafers, the manufacturing equipment would be stopped. To avoid manufacturing lost, production line needs to keep large amount of stock for dummy & control wafers. At the mean time, the large amount of stock on dummy & control wafers have created a lot of cost waste and capital burden.

This study is using the Inventory Level of M Semiconductor Foundry as an example. Based on the Theory of Constraints (TOC) and via actual data simulation and verification, this study is applying both the Demand-Pull Replenishment Inventory Control and Dynamic Buffer Management to prove that Demand-Pull Replenishment Inventory Control method is more effective than current Forecast Demand Inventory Control method. Furthermore, under the wafer shortage free condition, management team is able to keep a lower inventory level and enhance the competition of a wafer foundry.
URI: http://140.113.39.130/cdrfb3/record/nctu/#GT079863519
http://hdl.handle.net/11536/48600
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