完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Su, Ke-Hua | en_US |
dc.contributor.author | Hsu, Wei-Chou | en_US |
dc.contributor.author | Lee, Ching-Sung | en_US |
dc.contributor.author | Hu, Po-Jung | en_US |
dc.contributor.author | Hsia, Ru-Shang | en_US |
dc.contributor.author | Chen, Jenn-Fang | en_US |
dc.date.accessioned | 2014-12-08T15:06:17Z | - |
dc.date.available | 2014-12-08T15:06:17Z | - |
dc.date.issued | 2007-04-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1143/JJAP.46.2344 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/4861 | - |
dc.description.abstract | A novel In0.3Ga0.7As0.99N0.01(Sb)/GaAs high-electron-mobility transistor has been successfully investigated for the first time by incorporating surfactant Sb atoms during the InGaAsN channel growth by molecular beam epitaxy (MBE). Superior stable thermal characteristics, including a thermal threshold coefficient (partial derivative V-th/partial derivative T) of -0.807 mV/K and a high-temperature linearity (partial derivative GVS/partial derivative T) of -0.053 mV/K, were achieved because of the improved crystalline quality and the enhanced carrier confinement capability of the In0.3Ga0.7As0.99N0.01(Sb)/GaAs heterostructure. The device also demonstrated a peak extrinsic transconductance (g(m,max)) of 94 (109) mS/mm at 450 (300) K. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | InGaAsNSb/GaAs HEMT | en_US |
dc.subject | surfactant | en_US |
dc.subject | dilute channel | en_US |
dc.title | Highly stable thermal characteristics of a novel In0.3Ga0.7As0.99N0.01 (Sb)/GaAs high-electron-mobility transistor | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1143/JJAP.46.2344 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.issue | 4B | en_US |
dc.citation.spage | 2344 | en_US |
dc.citation.epage | 2347 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000247050200109 | - |
顯示於類別: | 會議論文 |