有機雙極性場效電晶體與邏輯應用電路研究

Abstract

本論文擬構想實施之研究方向，與目前所發展的有機雙極性場效電晶體之技術並不相同，目前相關文獻的研究重點，大多聚焦於如何讓單一元件，同時具備有雙極性的載子傳輸特性；本論文的研究重點在於成功驗證了一個新型結構構想，就是在有機雙極性場效電晶體的源/汲極與雙極性主動層之間加入電洞/電子阻擋層，依阻擋層的特性限制載子注入，進一步決定元件電性為N型或P型，最後整合成邏輯電路應用(CMOS Inverter)。 首先利用N型駢苯衍生物(N, N'-ditridecylperylene-3, 4,9,10 -Tetracarboxylic diimide ,PTCDI-C13)和P型五環素(2,3:6,7-Dibenzanthracene ,Pentacene) 來達到平衡的雙載子傳輸特性。並以有機材料2,9-dimethyl-4 ,7-diphenyl-phenanthrolin (BCP)和無機材料氟化鋰(Lithium Fluoride, LiF)當作電洞阻擋層，和以有機材料4 ', 4''-Tris (N-3-methylphenyl-N-phenylamino) triphenylamine (m-MTDATA)和無機材料三氧化鉬(Molybdenum Trioxide ,MoO3)、三氧化鎢(Tungsten Trioxide ,WO3)當作電子阻擋層進行驗證，得出以BCP為電洞阻擋層，以m-MTDATA為電子阻擋層，所萃取的單一載子特性最為理想。最後整合成邏輯電路應用(CMOS Inverter)獲得良好的轉換曲線(Transfer curve)，增益(Gain)可達到59.79。

In the thesis, the research of Ambipolar Organic Field Effect Transistors ( Ambipolar OFETs) is different from the current technology. Currently the related studies mostly focus on the existence of the Ambipolar character in single device. However, the thesis has developed a new structure by inserting hole blocking layer (HBL) and electron blocking layer (EBL) into Source/Drain and Ambipolar active layer to define the unipolar character, and finally integrating a logic circuit (CMOS Inverter). First, we use N, N'-ditridecylperylene-3, 4,9,10 -Tetracarboxylic diimide (PTCDI-C13) and 2,3:6,7-Dibenzanthracene (Pentacene) to achieve a balance Ambipolar properties. Then we use organic material 2,9-dimethyl-4 ,7-diphenyl-phenanthrolin (BCP) and inorganic materials Lithium Fluoride (LiF) as a hole blocking layer (HBL), and use organic materials 4 ', 4''-Tris (N-3-methylphenyl-N-phenylamino) triphenylamine (m-MTDATA) and inorganic materials Molybdenum Trioxide (MoO3), Tungsten Trioxide (WO3) as the electron blocking layer. In this way, we had verified the best unipolar with BCP hole blocking layer, and m-MTDATA electronic blocking layer. The final logic Circuit would get a good Transfer curve, and the Gain could achieve 59.79.