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dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:06:20Z-
dc.date.available2014-12-08T15:06:20Z-
dc.date.issued1983en_US
dc.identifier.issn0018-9200en_US
dc.identifier.urihttp://hdl.handle.net/11536/4911-
dc.language.isoen_USen_US
dc.titleA NEW INTERNAL OVERVOLTAGE PROTECTION STRUCTURE FOR THE BIPOLAR POWER TRANSISTORen_US
dc.typeArticleen_US
dc.identifier.journalIEEE JOURNAL OF SOLID-STATE CIRCUITSen_US
dc.citation.volume18en_US
dc.citation.issue6en_US
dc.citation.spage773en_US
dc.citation.epage777en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1983SE37900022-
dc.citation.woscount1-
Appears in Collections:Articles


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