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dc.contributor.author許家修en_US
dc.contributor.authorHsu, Hsiu-Chiaen_US
dc.contributor.author成維華en_US
dc.contributor.authorChieng, Wei-Huaen_US
dc.date.accessioned2014-12-12T01:56:39Z-
dc.date.available2014-12-12T01:56:39Z-
dc.date.issued2012en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT079914620en_US
dc.identifier.urihttp://hdl.handle.net/11536/49506-
dc.description.abstract直流對直流轉換器由於其結構的彈性而被廣泛應用在電力電子電路,本文以其中之升壓電路為基礎實現三種升壓轉換器的應用。切換頻率30kHz~100kHz的低頻升壓轉換器與切換頻率100kHz~600kHz的高頻升壓轉換器,藉輸出的回授訊號經由控制晶片對脈衝寬度作切換調控使得在不同輕重負載下可達到穩定輸出功率,並進一步分析電路的功率損耗成分。另外為找尋替代已漸漸達到發展極限的矽材料源件,將傳統金氧半場效電晶體與氮化鎵高電子遷移率電晶體作為開關電路,以比較兩種材料之電力特性,驗證氮化鎵材料在電子電路的優點。zh_TW
dc.description.abstractDC/DC converter is one of the most popular power electronic converters owing to its simple structure and wide applications. One type of the DC/DC converter is boost converter. The thesis realizes three boost converters operating in two different range of switching frequencies, 33kHz to 100kHz and 100kHz to 600kHz, which modulate the duty ration to maintain the output power being stable by sensing the feedback signal of the output voltage. Furthermore, the thsis analize the composistion of the factor of power loss in the circuits to increase the efficiency, and replaces the switching element of traditional MOSFET Si-material by GaN HEMT to test the better electronic characteristic of GaN HEMT.en_US
dc.language.isozh_TWen_US
dc.subject直流對直流zh_TW
dc.subject升壓轉換器zh_TW
dc.subject功率損耗zh_TW
dc.subjectDC/DC Converteren_US
dc.subjectBoost Convereren_US
dc.subjectPower Lossen_US
dc.title直流對直流升壓轉換器實現zh_TW
dc.titleRealization of DC/DC Boost Converteren_US
dc.typeThesisen_US
dc.contributor.department機械工程學系zh_TW
Appears in Collections:Thesis