POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON

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DC Field	Value	Language
dc.contributor.author	CHEN, MC	en_US
dc.contributor.author	SILVESTRI, VJ	en_US
dc.date.accessioned	2014-12-08T15:06:23Z	-
dc.date.available	2014-12-08T15:06:23Z	-
dc.date.issued	1982	en_US
dc.identifier.issn	0013-4651	en_US
dc.identifier.uri	http://hdl.handle.net/11536/4954	-
dc.language.iso	en_US	en_US
dc.title	POST-EPITAXIAL POLYSILICON AND SI3N4 GETTERING IN SILICON	en_US
dc.type	Article	en_US
dc.identifier.journal	JOURNAL OF THE ELECTROCHEMICAL SOCIETY	en_US
dc.citation.volume	129	en_US
dc.citation.issue	6	en_US
dc.citation.spage	1294	en_US
dc.citation.epage	1299	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1982NS83700036	-
dc.citation.woscount	27	-
Appears in Collections:	Articles

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