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dc.contributor.authorLee, Yea-Chenen_US
dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorCheng, Bo-Siaoen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChiou, Shu-Woeien_US
dc.date.accessioned2014-12-08T15:06:24Z-
dc.date.available2014-12-08T15:06:24Z-
dc.date.issued2007-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.2450en_US
dc.identifier.urihttp://hdl.handle.net/11536/4970-
dc.description.abstractAlGaInP-based resonant-cavity light-emitting diodes (RCLEDs) with high power and high speed have been fabricated. In this study, the RCLEDs were designed with different light-output aperture sizes 84, 60, and 40 pm, for different applications on plastic optical fibers. Small-signal modulation bandwidths as high as 3 10 MHz at a forward current of 20 mA and an output power as high as 1.5 mW can be achieved for devices with 40 pm apertures. The devices with 84 tm apertures had an output power of more than 3.5 mW at a driving current of 20 mA and a maximum efficiency of over 12% with an epoxy-encapsulated package. The devices with 40 mu m apertures satisfied with the IEEE 1394b s400 standard. Furthermore, the devices showed stable coupling efficiency for various currents and output powers at different ambience temperatures. In addition, the lifetime of devices is over 1300 h, and the power decay is less than 0.5 dB at 85 degrees C for a 40 mA driving current.en_US
dc.language.isoen_USen_US
dc.subjectresonant-cavity light-emitting diodes (RCLEDs)en_US
dc.subjectplastic optical fiber (POF)en_US
dc.subjectoptical communicationen_US
dc.subjectdetuning optimizationen_US
dc.titleHigh-performance 650 nm resonant-cavity light-emitting diodes for plastic optical-fiber applicationen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.46.2450en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue4Ben_US
dc.citation.spage2450en_US
dc.citation.epage2453en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000247050200132-
Appears in Collections:Conferences Paper


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