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dc.contributor.authorWU, CYen_US
dc.date.accessioned2014-12-08T15:06:25Z-
dc.date.available2014-12-08T15:06:25Z-
dc.date.issued1981en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/11536/4991-
dc.identifier.urihttp://dx.doi.org/10.1063/1.329025en_US
dc.language.isoen_USen_US
dc.titleTHE BIAS-DEPENDENT PHOTOELECTRIC BARRIER HEIGHT OF THE SCHOTTKY DIODESen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.329025en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume52en_US
dc.citation.issue4en_US
dc.citation.spage2909en_US
dc.citation.epage2912en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1981LS60400047-
dc.citation.woscount7-
Appears in Collections:Articles


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