AN INVESTIGATION OF MINORITY-CARRIER LIFETIME IN SILICON DOPED EITHER WITH ZINC OR COBALT

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	SU, YK	en_US
dc.contributor.author	CHI, CC	en_US
dc.date.accessioned	2014-12-08T15:06:28Z	-
dc.date.available	2014-12-08T15:06:28Z	-
dc.date.issued	1980	en_US
dc.identifier.issn	0020-7217	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5043	-
dc.language.iso	en_US	en_US
dc.title	AN INVESTIGATION OF MINORITY-CARRIER LIFETIME IN SILICON DOPED EITHER WITH ZINC OR COBALT	en_US
dc.type	Article	en_US
dc.identifier.journal	INTERNATIONAL JOURNAL OF ELECTRONICS	en_US
dc.citation.volume	48	en_US
dc.citation.issue	1	en_US
dc.citation.spage	1	en_US
dc.citation.epage	6	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:A1980JV10700001	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文