標題: Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory
作者: Hu, Chih-Wei
Chang, Ting-Chang
Liu, Po-Tsun
Tu, Chun-Hao
Lee, Sheng-Kai
Sze, Simon M.
Chang, Chun-Yen
Chiou, Bi-Shiou
Tseng, Tseung-Yuan
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 14-四月-2008
摘要: In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si(0.5)Ge(0.5)). The deposited film was annealed in oxygen ambient at 650 degrees C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements. (C) 2008 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2908916
http://hdl.handle.net/11536/9455
ISSN: 0003-6951
DOI: 10.1063/1.2908916
期刊: APPLIED PHYSICS LETTERS
Volume: 92
Issue: 15
結束頁: 
顯示於類別:期刊論文


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