標題: | Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory |
作者: | Hu, Chih-Wei Chang, Ting-Chang Liu, Po-Tsun Tu, Chun-Hao Lee, Sheng-Kai Sze, Simon M. Chang, Chun-Yen Chiou, Bi-Shiou Tseng, Tseung-Yuan 電子工程學系及電子研究所 光電工程學系 Department of Electronics Engineering and Institute of Electronics Department of Photonics |
公開日期: | 14-四月-2008 |
摘要: | In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si(0.5)Ge(0.5)). The deposited film was annealed in oxygen ambient at 650 degrees C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements. (C) 2008 American Institute of Physics. |
URI: | http://dx.doi.org/10.1063/1.2908916 http://hdl.handle.net/11536/9455 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.2908916 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 92 |
Issue: | 15 |
結束頁: | |
顯示於類別: | 期刊論文 |