Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memory

Abstract

In this work, Ge-doped cobalt-silicon thin film was synthesized using a cosputter system (Co and Si(0.5)Ge(0.5)). The deposited film was annealed in oxygen ambient at 650 degrees C to form cobalt-silicide nanocrystals. The formation of isolated silicide nanocrystals was confirmed by transmission electron microscopy and x-ray photoelectron spectroscopy analysis. In metal-oxide-insulator-oxide-silicon structure, a significant electrical hysteresis is observed and attributed by the presence of the cobalt-silicide nanocrystals and the oxidized Ge elements. (C) 2008 American Institute of Physics.