OBSERVATION OF A POSSIBLE FRINGING FIELD-EFFECT ON THE THRESHOLD VOLTAGE VARIATION OF THE SHORT-CHANNEL MOSFET

Full metadata record

DC Field	Value	Language
dc.contributor.author	CHANG, HL	en_US
dc.contributor.author	YU, SY	en_US
dc.date.accessioned	2014-12-08T15:06:30Z	-
dc.date.available	2014-12-08T15:06:30Z	-
dc.date.issued	1980	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5065	-
dc.identifier.uri	http://dx.doi.org/10.1063/1.327530	en_US
dc.language.iso	en_US	en_US
dc.title	OBSERVATION OF A POSSIBLE FRINGING FIELD-EFFECT ON THE THRESHOLD VOLTAGE VARIATION OF THE SHORT-CHANNEL MOSFET	en_US
dc.type	Note	en_US
dc.identifier.doi	10.1063/1.327530	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	51	en_US
dc.citation.issue	11	en_US
dc.citation.spage	6037	en_US
dc.citation.epage	6038	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1980KX90100079	-
dc.citation.woscount	0	-
Appears in Collections:	Articles