BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	YU, GJ	en_US
dc.contributor.author	TSAI, C	en_US
dc.contributor.author	YU, SY	en_US
dc.date.accessioned	2014-12-08T15:06:31Z	-
dc.date.available	2014-12-08T15:06:31Z	-
dc.date.issued	1979	en_US
dc.identifier.issn	0021-8979	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5082	-
dc.identifier.uri	http://dx.doi.org/10.1063/1.325734	en_US
dc.language.iso	en_US	en_US
dc.title	BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.325734	en_US
dc.identifier.journal	JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	50	en_US
dc.citation.issue	10	en_US
dc.citation.spage	6421	en_US
dc.citation.epage	6422	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1979HS03100066	-
dc.citation.woscount	0	-
顯示於類別：	期刊論文