| 標題: | METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS |
| 作者: | LEI, TF LEE, CL CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 1979 |
| URI: | http://hdl.handle.net/11536/5092 |
| ISSN: | 0038-1101 |
| 期刊: | SOLID-STATE ELECTRONICS |
| Volume: | 22 |
| Issue: | 12 |
| 起始頁: | 1035 |
| 結束頁: | 1037 |
| Appears in Collections: | Articles |
- 金屬/ 負一菱化鎵接觸系統 / 雷添福;Lei, Tian-Fu;李崇仁;張俊彥;Li, Chong-Ren
- Hole Schottky barrier height enhancement and its application to metal-semiconductor-metal photodetectors / Lin, SD;Lee, CP
- Mechanism of Schottky barrier height modulation by thin dielectric insertion on n-type germanium / Tsui, Bing-Yue;Kao, Ming-Hong
- STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION / CHANG, EY;LAI, YL;LIN, KC;CHANG, CY
- 蕭基二極體特性之理論研究 / 施俊吉;Jiunn-Jyi Sze;鄭晃忠;Huang-Chung Cheng
- 具有鐿金屬矽化物之蕭特基能障金氧半場效電晶體的應用 / 連敏宏;荊鳳德
- AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etch / Huang, WJ;Fang, CY;Wong, JS;Lee, CS;Chang, EY
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