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dc.contributor.authorYang, Shih-Chunen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorWang, Chien-Pingen_US
dc.contributor.authorHuang, Sheng Bangen_US
dc.contributor.authorChen, Chiu-Lingen_US
dc.contributor.authorChiang, Pei-Fangen_US
dc.contributor.authorLee, An-Tseen_US
dc.contributor.authorChu, Mu-Taoen_US
dc.date.accessioned2014-12-08T15:06:37Z-
dc.date.available2014-12-08T15:06:37Z-
dc.date.issued2010-07-01en_US
dc.identifier.issn0026-2714en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.microrel.2010.03.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/5175-
dc.description.abstractThe investigation explores the factors that influence the long-term performance of high-power 1 W white light emitting diodes (LEDs). LEDs underwent an aging test in which they were exposed to various temperatures and electrical currents, to identify both their degradation mechanisms and the limitations of the LED chip and package materials. The degradation rates of luminous flux increased with electrical and thermal stresses. High electric stress induced surface and bulk defects in the LED chip during short-term aging, which rapidly increased the leakage current. Yellowing and cracking of the encapsulating lens were also important in package degradation at 0.7 A/85 degrees C and 0.7 A/55 degrees C. This degradation reduced the light extraction efficiency to an extent that is strongly related to junction temperature and the period of aging. junction temperatures were measured at various stresses to determine the thermal contribution and the degradation mechanisms. The results provided a complete understanding of the degradation mechanisms of both chip and package, which is useful in designing highly reliable and long-lifetime LEDs. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleFailure and degradation mechanisms of high-power white light emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.microrel.2010.03.007en_US
dc.identifier.journalMICROELECTRONICS RELIABILITYen_US
dc.citation.volume50en_US
dc.citation.issue7en_US
dc.citation.spage959en_US
dc.citation.epage964en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000279527900011-
dc.citation.woscount27-
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