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dc.contributor.authorYeh, P. H.en_US
dc.contributor.authorChen, L. J.en_US
dc.contributor.authorLiu, P. T.en_US
dc.contributor.authorWang, D. Y.en_US
dc.contributor.authorChang, T. C.en_US
dc.date.accessioned2014-12-08T15:06:37Z-
dc.date.available2014-12-08T15:06:37Z-
dc.date.issued2007-02-10en_US
dc.identifier.issn0013-4686en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.electacta.2006.09.006en_US
dc.identifier.urihttp://hdl.handle.net/11536/5179-
dc.description.abstractThe memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum I-GWrite/Erase/I-G Retention ratio can be obtained. (c) 2006 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNi nanocrystalsen_US
dc.subjectNiSi2 nanocrystalsen_US
dc.subjectCoSi2 nanocrystalsen_US
dc.subjectmetal nanocrystalsen_US
dc.subjectnonvolatile memoryen_US
dc.titleMetal nanocrystals as charge storage nodes for nonvolatile memory devicesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.electacta.2006.09.006en_US
dc.identifier.journalELECTROCHIMICA ACTAen_US
dc.citation.volume52en_US
dc.citation.issue8en_US
dc.citation.spage2920en_US
dc.citation.epage2926en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000244552300024-
Appears in Collections:Conferences Paper


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