Metal nanocrystals as charge storage nodes for nonvolatile memory devices

doi:10.1016/j.electacta.2006.09.006

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yeh, P. H.	en_US
dc.contributor.author	Chen, L. J.	en_US
dc.contributor.author	Liu, P. T.	en_US
dc.contributor.author	Wang, D. Y.	en_US
dc.contributor.author	Chang, T. C.	en_US
dc.date.accessioned	2014-12-08T15:06:37Z	-
dc.date.available	2014-12-08T15:06:37Z	-
dc.date.issued	2007-02-10	en_US
dc.identifier.issn	0013-4686	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.electacta.2006.09.006	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5179	-
dc.description.abstract	The memory effects of the metal nanocrystals were found to be more pronounced than those of the semiconductor nanocrystals. Various metal nanocrystals as charge storage nodes are reviewed. The memory effects have strong relationship with the work function, and the work function can be modulated by changing the metal species. By tunneling dielectrics engineering, the optimum I-GWrite/Erase/I-G Retention ratio can be obtained. (c) 2006 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	Ni nanocrystals	en_US
dc.subject	NiSi2 nanocrystals	en_US
dc.subject	CoSi2 nanocrystals	en_US
dc.subject	metal nanocrystals	en_US
dc.subject	nonvolatile memory	en_US
dc.title	Metal nanocrystals as charge storage nodes for nonvolatile memory devices	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1016/j.electacta.2006.09.006	en_US
dc.identifier.journal	ELECTROCHIMICA ACTA	en_US
dc.citation.volume	52	en_US
dc.citation.issue	8	en_US
dc.citation.spage	2920	en_US
dc.citation.epage	2926	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000244552300024	-
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