三氧化鎢/氧化銥二極體元件無電解質研究

Abstract

本論文的內容主要介紹，以三氧化鎢╱氧化銥二極體為基礎的元件在無電解質條件下工作研究。我們在白金電極上先後鍍上三氧化鎢與氧化銥薄膜，並讓兩薄膜中間部分重疊，使得薄膜重疊的界面形成二極體架構。這兩種薄膜都以濺鍍的方式，使用剝落製程技術，最後以環氧樹脂封裝完成。本元件的工作機制，是由於三氧化鎢與氧化銥薄膜都是雙載子注入，而我們濺鍍出來的氧化銥薄膜內可能含有氫離子，當氫離子進入薄膜內與外加的偏壓下，會使薄膜產生可逆式的氧化還原反應。我們就分成三個階段來證明我們的元件不需要外界的液態電解質也能夠工作。而氧化銥因為活性強，所以不容易得到其氧化還原電位，因此我們在氧化銥薄膜上再鍍上五氧化二鉭薄膜，五氧化二鉭能夠阻擋溶液中的氧氣繼續與氧化銥反應,而只讓溶液中的氫離子通過，所以就可以順利的量測到氧化銥的氧化還原電位。

This article made a main research into which based on WO3╱IrO2 diode device without electrolyte. We deposited WO3 and IrO2 thin films on platinum electrodes and made the parts of these thin films were overlap. The interface of these thin films formed a diode structure. These thin films are fabricated by the lift-off technique with reactive magnetron sputtering at deposition temperature 100℃ and these devices were package with epoxy. The mechanism of the device was based on double injection, which IrO2 thin film may have H＋. When we plus electron and H＋, the diode in the reversible redox reaction. We have three steps to prove WO3╱IrO2 device working without electrolyte. The IrO2 thin film after coating Ta2O5 , we have successfully got potential of iridium oxide.